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Switching Diodes
MA2C185
Silicon epitaxial planar type
Unit : mm
For high-voltage switching circuits, small power rectification I Features
* High reverse voltage (VR = 200 V) * Large output current IO * Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole
COLORED BAND INDICATES CATHODE
0.45 max. 1
0.2 max.
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current* Average power dissipation Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 -65 to +175 Unit V V mA mA A mW C C
2
1.75 max.
1: Cathode 2: Anode JEDEC: DO-34
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Symbol IR VF VR Ct VR = 200 V IF = 200 mA IR = 100 A VR = 0 V, f = 1 MHz 250 4.5 Conditions Min Typ Max 200 1.2 Unit nA V V pF
Note) Rated input/output frequency: 3 MHz
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2C185 White Green
13 min.
2.2 0.3
1st Band 2nd Band
0.2 max.
13 min.
1
MA2C185
I F VF
103
Switching Diodes
VF Ta
1.6 1.4
10
IR Ta
102
Forward current IF (mA)
1
Forward voltage VF (V)
1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 1 mA 0.4 0.2
Reverse current IR (A)
10
10-1 VR = 200 V 10-2
1
Ta = 150C 100C 25C
10-1
- 20C
10-3
10-2
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10-4
0
40
80
120
160
200
0
20 40 60 80 100 120 140 160 180
Forward voltage VF (V)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
IR VR
1 Ta = 150C
10-1
Reverse current IR (A)
10-2
100C
10-3
10-4
25C
10-5
0
40
80
120
160
200
Reverse voltage VR (V)
2

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